| Autor: |
Yan Liang, Zhenzhou Lu, Guangyi Wang, Dongsheng Yu, Herbert Ho-Ching Iu |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
IEEE Access, Vol 7, Pp 180181-180193 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2169-3536 |
| DOI: |
10.1109/ACCESS.2019.2957371 |
| Popis: |
A floating memristor emulator composed of off-the-shelf devices is presented to mimic the dynamics of threshold-type binary memristor. The diodes combined with proportional amplifier circuits are used to model the threshold sensitive behavior. By utilizing a bistable circuit, non-volatility and binary characteristic of the memristor emulator are implemented. The impacts of circuit parameters including resistance and capacitance on the memristor properties are explicated. For instance, the ratio of high memristance to low memristance can be changed by altering the specified resistances. Simulation results validate the feasibility of the proposed memristor emulator circuit. Tunable thresholds, a great memductance ratio, binary characteristic, and non-volatility of the memristor emulator are demonstrated experimentally under the inputs of sinusoidal signal and a series of pulses. In addition, state switching rule of the memristor are tested experimentally through applying pulse signals with different frequency or amplitude. Finally, memristor ratioed logic (MRL) circuits containing OR, AND, and XOR logic gates are used to verify the application of the proposed emulator. The emulator can be operated with floating connection and applied in various memristive circuits. Hence, it can offer a platform for the research of the memristor-based applications. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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