Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal
| Autor: | Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | Crystals, Vol 10, Iss 1, p 25 (2020) |
| Druh dokumentu: | article |
| ISSN: | 2073-4352 10010025 |
| DOI: | 10.3390/cryst10010025 |
| Popis: | The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated. In this study, a Zr metal as a gate contact to p-GaN/AlGaN/GaN high mobility transistor (HEMT) was first applied to improve the hole accumulation at the high gate voltage region. In addition, the ZrN interface is also beneficial for improving the Schottky barrier with low nitrogen vacancy induced traps. The features of Zr are low work function (4.05 eV) and high melting point, which are two key parameters with p-GaN Schottky contact at reversed voltage. Therefore, Zr/p-GaN interface exhibits highly potential for GaN-based switching power device applications. |
| Databáze: | Directory of Open Access Journals |
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