Novel Method of Improving Electrical Properties of Thin PECVD Oxide Films by Fluorination of Silicon Surface Region by RIE in RF CF4 Plasma
Autor: | Małgorzata Kalisz, Grzegorz Głuszko, Romuald B. Beck |
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Jazyk: | angličtina |
Rok vydání: | 2023 |
Předmět: | |
Zdroj: | Journal of Telecommunications and Information Technology, Iss 1 (2023) |
Druh dokumentu: | article |
ISSN: | 1509-4553 1899-8852 |
DOI: | 10.26636/jtit.2010.1.1058 |
Popis: | This study describes a novel technique to form good quality low temperature oxide (< 350°C). Low temperature oxide was formed by N2O + SiH4:N2 plasma in a plasma enhanced chemical vapour deposition (PECVD) system on the silicon surface reactively etched in CF4 plasma (RIE – reactive ion etching). The fabricated oxide demonstrated excellent (for low temperature dielectric formation process) currentvoltage (I−V) characteristics, such as: low leakage current, high breakdown voltage and good reliability. Experimental results indicate that the proposed method of fluorine incorporation into the SiO2/Si inteface improves electrical parameters of MOS structures. |
Databáze: | Directory of Open Access Journals |
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