| Autor: |
Li Chen, Changmin Shi, Chuan Jiang, Hongmei Liu, Guangliang Cui, Dongchao Wang, Xiaolong Li, Kefu Gao, Xiaoming Zhang |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
New Journal of Physics, Vol 22, Iss 7, p 073005 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
1367-2630 |
| DOI: |
10.1088/1367-2630/ab9201 |
| Popis: |
It is challenging to realize the quantum anomalous Hall effect (QAHE) at high operating temperatures using the two-dimensional (2D) Dirac surface states of three-dimensional (3D) topological insulators (TIs). Given the small non-trivial gap induced by adsorbing ferromagnetic (FM) CrI _3 monolayer (ML) on the surface of Bi _2 Se _3 films, we here propose another TI and FM semiconductor interfaced system to enhance the gap by inserting CrI _3 ML between the first top (bottom) quintuple layers (QL) and sub-top (sub-bottom) QL of Bi _2 Se _3 films symmetrically. The 2D non-trivial phase emerges in the Bi _2 Se _3 films with five or more QLs and the gap is enlarged to 30 meV in 1QL-Bi _2 Se _3 /CrI _3 /4QL-Bi _2 Se _3 /CrI _3 /1QL-Bi _2 Se _3 , which can be understood by the enhanced magnetic proximity effect. The topological non-triviality is confirmed by the nonzero Chern number and the existence of chiral edge state. Our finding will provide useful guidance to optimize the Bi _2 Se _3 –CrI _3 interface system for realizing QAHE at relatively high operating temperatures. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
