Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection

Autor: Zhuo Wang, Zhao Qi, Longfei Liang, Ming Qiao, Zhaoji Li, Bo Zhang
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Zdroj: Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-7 (2019)
Druh dokumentu: article
ISSN: 1931-7573
1556-276X
DOI: 10.1186/s11671-019-3017-8
Popis: Abstract A novel CMOS-process-compatible high-holding voltage silicon-controlled rectifier (HHV-SCR) for electrostatic discharge (ESD) protection is proposed and demonstrated by simulation and transmission line pulse (TLP) testing. The newly introduced hole (or electron) recombination region H-RR (or E-RR) not only recombines the minority carrier in parasitic PNP (or NPN) transistor base by N+ (or P+) layer, but provides the additional recombination to eliminate the surface avalanche carriers by newly added P+ (or N+) layer in H-RR (or E-RR), which brings about a further improvement of holding voltage (V h). Compared with the measured V h of 1.8 V of low-voltage triggered silicon-controlled rectifier (LVTSCR), the V h of HHV-SCR can be increased to 8.1 V while maintaining a sufficiently high failure current (I t2 > 2.6 A). An improvement of over four times in the figure of merit (FOM) is achieved.
Databáze: Directory of Open Access Journals
Externí odkaz: