| Autor: |
Xinghuan Chen, Fangzhou Wang, Zeheng Wang, Jing-Kai Huang |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Micromachines, Vol 14, Iss 11, p 2041 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2072-666X |
| DOI: |
10.3390/mi14112041 |
| Popis: |
The GaN industry always demands further improvement in the power transport capability of GaN-based high-energy mobility transistors (HEMT). This paper presents a novel enhancement-type GaN HEMT with high power transmission capability, which utilizes a coherent channel that can form a three-dimensional electron sea. The proposed device is investigated using the Silvaco simulation tool, which has been calibrated against experimental data. Numerical simulations prove that the proposed device has a very high on-state current above 3 A/mm, while the breakdown voltage (above 800 V) is not significantly affected. The calculated Johnson’s and Baliga’s figure-of-merits highlight the promise of using such a coherent channel for enhancing the performance of GaN HEMTs in power electronics applications. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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