| Autor: |
Sapaev I. B. |
| Jazyk: |
English<br />French |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
E3S Web of Conferences, Vol 413, p 04010 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2267-1242 |
| DOI: |
10.1051/e3sconf/202341304010 |
| Popis: |
The n+CdS-nCdS-nSi+ structures were obtained and their volt-ampere characteristics at different temperatures were studied. From the dependence of the volt-ampere characteristic it is shown that the sublinear and quadratic section of these structures has a section of current growth with voltage. It is determined that the n+CdS-nCdS-nSi+structures in the current flow direction at low illumination levels work as an injection photodiode. And these structures under laser illumination with λ=0.625 μm and power P=1.2 μW/cm2 have spectral sensitivity 2042 A/W, bias voltage 10 V. At irradiation by white light with energy W=3.6-10μW∙s it has integral sensitivity ≈21 A/I’m (2310 A/W) at bias voltage U=10V. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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