| Autor: |
Le Li, Guanlin Du, Yinyue Lin, Xi Zhou, Zeyu Gu, Linfeng Lu, Wenzhu Liu, Jin Huang, Jilei Wang, Liyou Yang, Shan-Ting Zhang, Dongdong Li |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
Cell Reports Physical Science, Vol 2, Iss 12, Pp 100684- (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2666-3864 |
| DOI: |
10.1016/j.xcrp.2021.100684 |
| Popis: |
Summary: Designing effective carrier-selective contact is a prerequisite for high-efficiency crystalline silicon (c-Si) solar cells. Compared to doped silicon thin films, wide-band-gap transition metal oxides (TMOs) feature low parasitic absorption, but their carrier selectivity and passivation being poor leads to a mediocre cell efficiency. Herein, we introduce a NiOx/MoOx bilayer as an efficient hole-selective contact in c-Si solar cells. A power conversion efficiency (PCE) of 21.31% is achieved using NiOx/MoOx bilayer, outperforming cells with a single layer of NiOx or MoOx. Upon depositing NiOx on MoOx, interfacial reactions modify the stoichiometry and defect chemistry in both oxides, leading to a band alignment beneficial for hole selectivity. By inserting a SiOx tunneling layer on c-Si surface to further suppress recombination, we achieve a PCE of 21.60% (fill factor 83.34%). Our work highlights a promising approach to improve the performance of dopant-free c-Si solar cells by employing cost-effective TMOs as hole-selective contact. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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