| Autor: |
Erik Lind, Elvedin Memisevic, Anil W. Dey, Lars-Erik Wernersson |
| Jazyk: |
angličtina |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 96-102 (2015) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2015.2388811 |
| Popis: |
In this paper, InAs/GaSb nanowire tunnel field-effect transistors (TFETs) are studied theoretically and experimentally. A 2-band 1-D analytic tunneling model is used to calculate the on- and off-current levels of nanowire TFETs with staggered source/channel band alignment. Experimental results from lateral InAs/GaSb are shown, as well as first results on integration of vertical InAs/GaSb nanowire TFETs on Si substrates. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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