| Autor: |
Md Ghulam Saber, David V. Plant, Nicolás Abadía |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 11, Iss 4, Pp 045219-045219-8 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0044490 |
| Popis: |
A complementary–metal–oxide semiconductor (CMOS) compatible all-silicon TM-pass polarizer using plasmonic bends is proposed. To simplify the fabrication and be compatible with the CMOS process, we employ only two materials: silicon and silicon dioxide. Highly doped silicon is used to support the plasmons. We obtain an extinction ratio and an insertion loss of 45.4 and 1.7 dB, respectively, at 1550 nm and a maximum extinction ratio of 58 dB. This is the highest reported extinction ratio for a TM-pass polarizer to the best of our knowledge. Furthermore, we achieved >20 dB of extinction ratio and |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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