Optical and Spin Properties of NV Center Ensembles in Diamond Nano-Pillars

Autor: Kseniia Volkova, Julia Heupel, Sergei Trofimov, Fridtjof Betz, Rémi Colom, Rowan W. MacQueen, Sapida Akhundzada, Meike Reginka, Arno Ehresmann, Johann Peter Reithmaier, Sven Burger, Cyril Popov, Boris Naydenov
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Nanomaterials, Vol 12, Iss 9, p 1516 (2022)
Druh dokumentu: article
ISSN: 2079-4991
95481788
DOI: 10.3390/nano12091516
Popis: Nitrogen-vacancy (NV) color centers in diamond are excellent quantum sensors possessing high sensitivity and nano-scale spatial resolution. Their integration in photonic structures is often desired, since it leads to an increased photon emission and also allows the realization of solid-state quantum technology architectures. Here, we report the fabrication of diamond nano-pillars with diameters up to 1000 nm by electron beam lithography and inductively coupled plasma reactive ion etching in nitrogen-rich diamonds (type Ib) with [100] and [111] crystal orientations. The NV centers were created by keV-He ion bombardment and subsequent annealing, and we estimate an average number of NVs per pillar to be 4300 ± 300 and 520 ± 120 for the [100] and [111] samples, respectively. Lifetime measurements of the NVs’ excited state showed two time constants with average values of τ1 ≈ 2 ns and τ2 ≈ 8 ns, which are shorter as compared to a single color center in a bulk crystal (τ ≈ 10 ns). This is probably due to a coupling between the NVs as well as due to interaction with bombardment-induced defects and substitutional nitrogen (P1 centers). Optically detected magnetic resonance measurements revealed a contrast of about 5% and average coherence and relaxation times of T2 [100] = 420 ± 40 ns, T2 [111] = 560 ± 50 ns, and T1 [100] = 162 ± 11 μs, T1 [111] = 174 ± 24 μs. These pillars could find an application for scanning probe magnetic field imaging.
Databáze: Directory of Open Access Journals
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