| Autor: |
Xavier X. Chia, George F. R. Chen, Yanmei Cao, Peng Xing, Hongwei Gao, Doris K. T. Ng, Dawn T. H. Tan |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2045-2322 |
| DOI: |
10.1038/s41598-022-16889-7 |
| Popis: |
Abstract Chemical vapor deposition-based growth techniques allow flexible design of complementary metal-oxide semiconductor (CMOS) compatible materials. Here, we report the deuterated silicon-rich nitride films grown using plasma-enhanced chemical vapor deposition. The linear and nonlinear properties of the films are characterized, and we experimentally confirm that the silicon-rich nitride films grown with SiD4 eliminates Si–H and N–H related absorption. The performance of identical waveguides for films grown with SiH4 and SiD4 are compared demonstrating a 2 dB/cm improvement in line with that observed in literature. Waveguides fabricated on the SRN:D film are further shown to possess a nonlinear parameter of 95 W−1 m−1, with the film exhibiting a linear and nonlinear refractive index of 2.46 and 9.8 $$\times$$ × 10–18 m2W−1 respectively. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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