| Autor: |
Emad Iranmanesh, Zihao Liang, Weiwei Li, Congwei Liao, Shunyu Jin, Chuan Liu, Kai Wang, Shengdong Zhang, Charalampos Doumanidis, Gehan A. J. Amaratunga, Hang Zhou |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Microsystems & Nanoengineering, Vol 10, Iss 1, Pp 1-16 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2055-7434 |
| DOI: |
10.1038/s41378-024-00699-0 |
| Popis: |
Abstract With the rapid development of the Internet of Things (IoTs), wearable sensors are playing an increasingly important role in daily monitoring of personal health and wellness. The signal-to-noise-ratio has become the most critical performance factor to consider. To enhance it, on the one hand, good sensing materials/devices have been employed; on the other hand, signal amplification and noise reduction circuits have been used. However, most of these devices and circuits work in an active sampling mode, requiring frequent data acquisition and hence, entailing high-power consumption. In this scenario, a flexible and wearable event-triggered sensor with embedded signal amplification without an external power supply is of great interest. Here, we report a flexible two-terminal piezotronic n-p-n bipolar junction transistor (PBJT) that acts as an autonomous and highly sensitive, current- and/or voltage-mediated pressure sensor. The PBJT is formed by two back-to-back piezotronic diodes which are defined as emitter-base and collector-base diodes. Upon force exertion on the emitter side, as a result of the piezoelectric effect, the emitter-base diode is forward biased while the collector-base diode is reverse biased. Due to the inherent BJT amplification effect, the PBJT achieves record-high sensitivities of 139.7 kPa-1 (current-based) and 88.66 kPa-1 (voltage-based) in sensing mode. The PBJT also has a fast response time of |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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