| Autor: |
Jeong Hyun Yoon, Young-Woong Song, Wooho Ham, Jeong-Min Park, Jang-Yeon Kwon |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
APL Materials, Vol 11, Iss 9, Pp 090701-090701-18 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2166-532X |
| DOI: |
10.1063/5.0149393 |
| Popis: |
With the arrival of the era of big data, the conventional von Neumann architecture is now insufficient owing to its high latency and energy consumption that originate from its separated computing and memory units. Neuromorphic computing, which imitates biological neurons and processes data through parallel procedures between artificial neurons, is now regarded as a promising solution to address these restrictions. Therefore, a device with analog switching for weight update is required to implement neuromorphic computing. Resistive random access memory (RRAM) devices are one of the most promising candidates owing to their fast-switching speed and scalability. RRAM is a non-volatile memory device and operates via resistance changes in its insulating layer. Many RRAM devices exhibiting exceptional performance have been reported. However, these devices only excel in one property. Devices that exhibit excellent performance in all aspects have been rarely proposed. In this Research Update, we summarize five requirements for RRAM devices and discuss the enhancement methods for each aspect. Finally, we suggest directions for the advancement of neuromorphic electronics. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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