| Autor: |
S. M. Thomas, Y. K. Sharma, M. A. Crouch, C. A. Fisher, A. Perez-Tomas, M. R. Jennings, P. A. Mawby |
| Jazyk: |
angličtina |
| Rok vydání: |
2014 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 2, Iss 5, Pp 114-117 (2014) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2014.2330737 |
| Popis: |
A novel 1500°C gate oxidation process has been demonstrated on Si face of 4H-SiC. Lateral channel metal-oxide-semiconductor-field-effect-transistors (MOSFETs) fabricated using this process have a maximum field effect mobility of approximately 40 cm\2 V-1 s-1 without post oxidation passivation. This is substantially higher than other reports of MOSFETs with thermally grown oxides (typically grown at the standard silicon temperature range of 1100-1200°C). This result shows the potential of a high temperature oxidation step for reducing the channel resistance (thus the overall conduction loss), in power 4H-SiC MOSFETs. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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