| Autor: |
Raseong Kim, Uygar E. Avci, Ian A. Young |
| Jazyk: |
angličtina |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 3, Iss 1, Pp 37-43 (2015) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2014.2363389 |
| Popis: |
Effects of source/drain (S/D) doping density (NSD) on the ballistic performance of III-V nanowire (NW) n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) are explored through atomistic quantum transport simulation. Different III-V materials (InAs, GaAs) and transport directions (, ) are considered with Si included for benchmarking for a gate length of 13 nm. For III-V's, depending on the operating condition (OFF-current target for a given supply voltage), there exists an optimum NSD that maximizes ON-current (ION) by balancing source exhaustion versus tunneling leakage. For InAs, sub-threshold swing degrades significantly with increasing NSD due to the light effective mass (m*) and source-drain tunneling, so the optimum NSD is low. For GaAs, such dependence is much weaker due to the larger m*, and the optimum NSD is higher. With optimized NSD's, InAs shows low ballistic ION due to the low density-of-state (DOS) whereas GaAs NW with transport direction shows good ballistic ION due to the improved DOS with still high injection velocity, making it a better candidate for high performance device. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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