| Autor: |
A. V. Shumilin, V. V. Kabanov |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Physical Review Research, Vol 5, Iss 3, p 033215 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2643-1564 |
| DOI: |
10.1103/PhysRevResearch.5.033215 |
| Popis: |
The spin phenomena observed at a clean metal-insulator interface are typically reduced to the Rashba-Edelstein effect, which leads to spin accumulation over a few monolayers. We demonstrate that the presence of interface disorder significantly expands the range of potential phenomena. Specifically, the skew scattering at the metal-insulator boundary gives rise to the “kinetic Rashba-Edelstein effect,” where spin accumulation occurs on a much larger length scale comparable to the mean free path. Moreover, at higher orders of spin-orbit interaction, skew scattering is accompanied with spin relaxation resulting in the interface spin-Hall effect—a conversion of electrical current to spin current at the metal surface. Unlike the conventional spin-Hall effect, this phenomenon persists even within the Born approximation. These two predicted phenomena can dominate the spin density and spin current in devices of intermediate thickness. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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