| Autor: |
Svetlana P. Kobeleva, Ilya M. Anfimov, Andrei V. Turutin, Sergey Yu. Yurchuk, Vladimir M. Fomin |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
Modern Electronic Materials, Vol 4, Iss 3, Pp 113-117 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2452-1779 |
| DOI: |
10.3897/j.moem.4.3.39536 |
| Popis: |
We have analyzed phosphorus diffusion profiles in an In0.01Ga0.99As/In0.56Ga0.44P/Ge germanium structure during phosphorus co-diffusion with gallium for synthesis of the germanium subcell in multi-junction solar cells.. Phosphorus diffused from the In0.56Ga0.44P layer simultaneously with gallium diffusion into the heavily gallium doped germanium substrate thus determining the specific diffusion conditions. Most importantly, gallium and phosphorus co-diffusion produces two p–n junctions instead of one. The phosphorus diffusion profiles do not obey Fick’s laws. The phosphorus diffusion coefficient DP depth distribution in the specimen has been studied using two methods, i.e., the Sauer–Freise modification of the Boltzmann–Matano method and the coordinate dependent diffusion method. We show that allowance for the drift component in the coordinate dependent diffusion method provides a better DP agreement with literary data. Both methods suggest the DP tendency to grow at the heterostructure boundary and to decline closer to the main p–n junction. The DP growth near the surface p–n junction the field of which is directed toward the heterostructure boundary and its decline near the main p–n junction with an oppositely directed field, as well as the observed DP growth with the electron concentration, suggest that the negatively charged VGeP complexes diffuse in the heterostructure by analogy with one-component diffusion. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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