| Autor: |
Kaivan Karami, Aniket Dhongde, Huihua Cheng, Paul M. Reynolds, Bojja Aditya Reddy, Daniel Ritter, Chong Li, Edward Wasige, Stephen Thoms |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Micro and Nano Engineering, Vol 19, Iss , Pp 100211- (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2590-0072 |
| DOI: |
10.1016/j.mne.2023.100211 |
| Popis: |
We demonstrate the fabrication of sub-100 nm T-Gate structures using a single electron beam lithography exposure and a tri-layer resist stack - PMMA/LOR/CSAR. Recent developments in modelling resist development were used to design the process, in which each resist is developed separately to optimise the resulting structure. By using a modelling approach and proximity correcting for the full resist stack, we were able to independently vary gate length (50-100 nm) and head size (250-500 nm) at the design stage and fabricate these T-Gates with high yield. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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