Electrical Properties of Organic Semiconductor Orange Nitrogen Dye Thin Films Deposited from Solution at High Gravity
| Autor: | Kh.S. Karimov, M.M. Ahmed, S.A. Moiz, P. Babadzhanov, R. Marupov, M.A. Turaeva |
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| Jazyk: | angličtina |
| Rok vydání: | 2003 |
| Předmět: | |
| Zdroj: | Eurasian Chemico-Technological Journal, Vol 5, Iss 2, Pp 109-113 (2003) |
| Druh dokumentu: | article |
| ISSN: | 1562-3920 2522-4867 |
| DOI: | 10.18321/ectj297 |
| Popis: | In this study the electrical properties of organic semiconductor orange nitrogen dye (OND) have been examined. Thin film samples were deposited from OND solution in water on a nickel substrate (it was the first electrode) at room temperature at different gravity conditions including, 1 g (reference samples), 123 g, 277 g and 1107 g by a centrifugal machine. As a second electrode of the samples a gallium drop was used. The voltage-current characteristics of the samples were measured at temperature interval of 30 °C 60 °C. It was found that all voltage-current characteristics were asymmetrical with slightly rectification behavior. The resistances of the samples decrease monotonously with temperature but with acceleration they show minimum around of 123 g. As a rule the forward bias resistance (+ voltage was applied to gallium) were less than reverse bias ones (+ voltage was applied to nickel). The electric behavior of the samples analyzed by the conception of space-charge limited currents (SCLC) at the presence of two different kinds of metallic electrodes (Ni and Ga) in the samples. |
| Databáze: | Directory of Open Access Journals |
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