Investigation of electrophysical, photo- and gas-sensitive properties of ZnO–SnO2 sol–gel films
| Autor: | Irina A. Gulyaeva, Alexandra P. Ivanisheva, Maria G. Volkova, Victoria Yu. Storozhenko, Soslan A. Khubezhov, Ekaterina M. Bayan, Victor V. Petrov |
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| Jazyk: | angličtina |
| Rok vydání: | 2024 |
| Předmět: | |
| Zdroj: | Journal of Advanced Dielectrics, Vol 14, Iss 01 (2024) |
| Druh dokumentu: | article |
| ISSN: | 2010135X 2010-1368 2010-135X |
| DOI: | 10.1142/S2010135X22450023 |
| Popis: | Thin nanocomposite films based on tin dioxide with a low content of zinc oxide (0.5–5[Formula: see text]mol.%) were obtained by the sol–gel method. The synthesized films are 300–600[Formula: see text]nm thick and contains pore sizes of 19–29[Formula: see text]nm. The resulting ZnO–SnO2 films were comprehensively studied by atomic force and Kelvin probe force microscopy, X-ray diffraction, scanning electron microscopy, and high-resolution X-ray photoelectron spectroscopy spectra. The photoconductivity parameters on exposure to light with a wavelength of 470[Formula: see text]nm were also studied. The study of the photosensitivity kinetics of ZnO–SnO2 films showed that the film with the Zn:Sn ratio equal to 0.5:99.5 has the minimum value of the charge carrier generation time constant. Measurements of the activation energy of the conductivity, potential barrier, and surface potential of ZnO–SnO2 films showed that these parameters have maxima at ZnO concentrations of 0.5[Formula: see text]mol.% and 1[Formula: see text]mol.%. Films with 1[Formula: see text]mol.% ZnO exhibit high response values when exposed to 5–50[Formula: see text]ppm of nitrogen dioxide at operating temperatures of [Formula: see text]C and [Formula: see text]C. |
| Databáze: | Directory of Open Access Journals |
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