Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor

Autor:	Stefan Ilić, Aleksandar Jevtić, Srboljub Stanković, Goran Ristić
Jazyk:	angličtina
Rok vydání:	2020
Předmět:	floating-gate MOS transistor ionizing radiation sensor ZTC semiconductor dosimeter transistor dynamic biasing Chemical technology TP1-1185
Zdroj:	Sensors, Vol 20, Iss 11, p 3329 (2020)
Druh dokumentu:	article
ISSN:	1424-8220
DOI:	10.3390/s20113329
Popis:	This paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate during irradiation was presented for the first time; this method achieved higher sensitivity compared to static-biased EPADs and better linear dependence. Due to the degradation of the transfer characteristics of EPAD during irradiation, a function of the safe operation area has been found that determines the maximum voltage at the control gate for the desired dose, which will not lead to degradation of the transistor. Using an energy band diagram, it was explained why the zero-biased EPAD has higher sensitivity than the static-biased EPAD.
Databáze:	Directory of Open Access Journals
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