Improved Tunneling Property of p+Si Nanomembrane/n+GaAs Heterostructures through Ultraviolet/Ozone Interface Treatment

Autor:	Kwangeun Kim, Jaewon Jang
Jazyk:	angličtina
Rok vydání:	2022
Předmět:	inorganic semiconductor compound semiconductor nanomembrane heterostructure ultraviolet/ozone treatment Inorganic chemistry QD146-197
Zdroj:	Inorganics, Vol 10, Iss 12, p 228 (2022)
Druh dokumentu:	article
ISSN:	2304-6740
DOI:	10.3390/inorganics10120228
Popis:	Here, heterostructures composed of p+Si nanomembranes (NM)/n+GaAs were fabricated by ultraviolet/ozone (UV/O3, UVO) treatment, and their tunneling properties were investigated. The hydrogen (H)-terminated Si NM was bonded to the oxygen (O)-terminated GaAs substrate, leading to Si/GaAs tunnel junctions (TJs). The atomic-scale features of the H-O-terminated Si/GaAs TJ were analyzed and compared to those of Si/GaAs heterojunctions with no UVO treatment. The electrical characteristics demonstrated the emergence of negative differential resistance, with an average peak-to-valley current ratio of 3.49, which was examined based on the band-to-band tunneling and thermionic emission theories.
Databáze:	Directory of Open Access Journals
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