| Autor: |
Donaev S.B., Shirinov G.M., Ergasheva S., Rakhimov A.M., Wang Shenghao, Abduvayitov A.A. |
| Jazyk: |
English<br />French |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
E3S Web of Conferences, Vol 383, p 04041 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2267-1242 |
| DOI: |
10.1051/e3sconf/202338304041 |
| Popis: |
Auger electron spectroscopy combined with ion etching was used to study the effect of ion doping on the distribution profiles of atoms in silicon in contact with its surface. It has been established that preliminary implantation of Ba+ ions with E0=0.5-1 keV leads to a sharp decrease (by a factor of 10-12) in the diffusion length of oxygen and nickel atoms. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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