Sensing with extended gate negative capacitance ferroelectric field-effect transistors

Autor: Honglei Xue, Yue Peng, Qiushi Jing, Jiuren Zhou, Genquan Han, Wangyang Fu
Jazyk: angličtina
Rok vydání: 2024
Předmět:
Zdroj: Chip, Vol 3, Iss 1, Pp 100074- (2024)
Druh dokumentu: article
ISSN: 2709-4723
DOI: 10.1016/j.chip.2023.100074
Popis: With major signal analytical elements situated away from the measurement environment, extended gate (EG) ion-sensitive field-effect transistors (ISFETs) offer prospects for whole chip circuit design and system integration of chemical sensors. In this work, a highly sensitive and power-efficient ISFET was proposed based on a metal–ferroelectric–insulator gate stack with negative capacitance–induced super-steep subthreshold swing and ferroelectric memory function. Along with a remotely connected EG electrode, the architecture facilitates diverse sensing functions for future establishment of smart biochemical sensor platforms.
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