| Autor: |
Shin-Ichiro Hayashi, Keiji Wada |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
IEEE Open Journal of Power Electronics, Vol 5, Pp 709-717 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2644-1314 |
| DOI: |
10.1109/OJPEL.2024.3396839 |
| Popis: |
This paper proposes a gate drive circuit with a condition monitoring function for detecting the gate oxide degradation in silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs). Trapped charges in the gate oxide can cause fluctuations in the on-resistance and gate threshold voltages. These phenomena affect the long-term reliability of power conversion circuits. The proposed condition monitoring function detects the degradation of the gate oxide by measuring the input capacitance $C_{\mathrm{iss}}$ versus the gate–source voltage $v_{\mathrm{GS}}$ characteristics ($C_{\mathrm{iss}}$–$v_{\mathrm{GS}}$ characteristics) of SiC MOSFETs implemented in power conversion circuits. Experiments on the proposed gate drive circuit were conducted using a 400 W-rated buck converter circuit in which a SiC MOSFET is implemented. The experimental results show that the gate drive circuit is capable of online measurement of $C_{\mathrm{iss}}$–$v_{\mathrm{GS}}$ characteristics and gate drive at 20 kHz. The online measurement of the $C_{\mathrm{iss}}$–$v_{\mathrm{GS}}$ characteristics corresponds to the offline measurement with a measurement instrument, indicating the effectiveness of the gate drive circuit. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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