Improvement of Switching Speed of a 600-V Nonpunch-Through Insulated Gate Bipolar Transistor Using Fast Neutron Irradiation
| Autor: | Ha Ni Baek, Gwang Min Sun, Ji suck Kim, Sy Minh Tuan Hoang, Mi Eun Jin, Sung Ho Ahn |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: | |
| Zdroj: | Nuclear Engineering and Technology, Vol 49, Iss 1, Pp 209-215 (2017) |
| Druh dokumentu: | article |
| ISSN: | 1738-5733 24802425 |
| DOI: | 10.1016/j.net.2016.08.016 |
| Popis: | Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of 1 × 108 n/cm2, 1 × 109 n/cm2, 1 × 1010 n/cm2, and 1 × 1011 n/cm2. Electrical characteristics such as current–voltage, forward on-state voltage drop, and switching speed of the device were analyzed and compared with those prior to irradiation. The on-state voltage drop of the initial devices prior to irradiation was 2.08 V, which increased to 2.10 V, 2.20 V, 2.3 V, and 2.4 V, respectively, depending on the irradiation dose. This effect arises because of the lattice defects generated by the fast neutrons. In particular, the turnoff delay time was reduced to 92 nanoseconds, 45% of that prior to irradiation, which means there is a substantial improvement in the switching speed of the device. |
| Databáze: | Directory of Open Access Journals |
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