Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching

Autor: Ghulam Dastgeer, Amir Muhammad Afzal, Jamal Aziz, Sajjad Hussain, Syed Hassan Abbas Jaffery, Deok-kee Kim, Muhammad Imran, Mohammed Ali Assiri
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Materials, Vol 14, Iss 24, p 7535 (2021)
Druh dokumentu: article
ISSN: 1996-1944
49564609
DOI: 10.3390/ma14247535
Popis: Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-dimensional (2D) materials, flexible memory devices are easy to build, because of their flexible nature. Here, we report on our flexible resistive-switching devices, composed of a bilayer tin-oxide/tungsten-ditelluride (SnO2/WTe2) heterostructure sandwiched between Ag (top) and Au (bottom) metal electrodes over a flexible PET substrate. The Ag/SnO2/WTe2/Au flexible devices exhibited highly stable resistive switching along with an excellent retention time. Triggering the device from a high-resistance state (HRS) to a low-resistance state (LRS) is attributed to Ag filament formation because of its diffusion. The conductive filament begins its development from the anode to the cathode, contrary to the formal electrochemical metallization theory. The bilayer structure of SnO2/WTe2 improved the endurance of the devices and reduced the switching voltage by up to 0.2 V compared to the single SnO2 stacked devices. These flexible and low-power-consumption features may lead to the construction of a wearable memory device for data-storage purposes.
Databáze: Directory of Open Access Journals
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