| Autor: |
Nan Wang, Chunlai Xue, Fengshuo Wan, Yue Zhao, Guoyin Xu, Zhi Liu, Jun Zheng, Yuhua Zuo, Buwen Cheng, Qiming Wang |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
IEEE Photonics Journal, Vol 13, Iss 2, Pp 1-9 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
1943-0655 |
| DOI: |
10.1109/JPHOT.2021.3065223 |
| Popis: |
We report the design and fabrication of a high-speed GeSn normal-incidence p-i-n photodetector. To realize high-speed detection in all telecommunication bands, we optimize the Sn content in the absorption layer, the absorption-layer thickness, and the device size. The responsivity of the 18-μm-diameter device at 1550 nm reaches 0.32 A/W with an extended cutoff wavelength of 1700 nm and a 3-dB bandwidth as high as 28 GHz under −3 V bias, clear open eye diagrams are also obtained under zero bias at 1630 nm. All the results indicate that the device has a significant potential for applications in Si-based optical telecommunication in all telecommunication bands. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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