Thermoelectric Transport in a Three-Dimensional HgTe Topological Insulator

Autor: Gennady M. Gusev, Ze D. Kvon, Alexander D. Levin, Nikolay N. Mikhailov
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Nanomaterials, Vol 11, Iss 12, p 3364 (2021)
Druh dokumentu: article
ISSN: 2079-4991
DOI: 10.3390/nano11123364
Popis: The thermoelectric response of 80 nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the 2D Dirac electrons coexist with bulk hole states, the Seebeck coefficient is modified due to 2D electron–3D hole scattering.
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