| Autor: |
Youngmin Kim, Simone Assali, Hyo-Jun Joo, Sebastian Koelling, Melvina Chen, Lu Luo, Xuncheng Shi, Daniel Burt, Zoran Ikonic, Donguk Nam, Oussama Moutanabbir |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Nature Communications, Vol 14, Iss 1, Pp 1-7 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2041-1723 |
| DOI: |
10.1038/s41467-023-40140-0 |
| Popis: |
Abstract Nanowires are promising platforms for realizing ultra-compact light sources for photonic integrated circuits. In contrast to impressive progress on light confinement and stimulated emission in III-V and II-VI semiconductor nanowires, there has been no experimental demonstration showing the potential to achieve strong cavity effects in a bottom-up grown single group-IV nanowire, which is a prerequisite for realizing silicon-compatible infrared nanolasers. Herein, we address this limitation and present an experimental observation of cavity-enhanced strong photoluminescence from a single Ge/GeSn core/shell nanowire. A sufficiently large Sn content ( ~ 10 at%) in the GeSn shell leads to a direct bandgap gain medium, allowing a strong reduction in material loss upon optical pumping. Efficient optical confinement in a single nanowire enables many round trips of emitted photons between two facets of a nanowire, achieving a narrow width of 3.3 nm. Our demonstration opens new possibilities for ultrasmall on-chip light sources towards realizing photonic-integrated circuits in the underexplored range of short-wave infrared (SWIR). |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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