Silicon Nitride Based Non-Volatile Memory Structures with Embedded Si or Ge Nanocrystals
| Autor: | Zsolt J. Horvath, P. Basa, T. Jaszi, A. E. Pap, Gy. Molnar, A. I. Kovalev, D. L. Wainstein, T. Gerlai, P. Turmezei |
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| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: | |
| Zdroj: | Communications, Vol 12, Iss 2, Pp 19-22 (2010) |
| Druh dokumentu: | article |
| ISSN: | 1335-4205 2585-7878 |
| DOI: | 10.26552/com.C.2010.2.19-22 |
| Popis: | Memory structures with an embedded sheet of separated Si or Ge nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control and SiO2 tunnel layers. It was obtained that a properly located layer of semiconductor nanocrystals can improve both the charging and retention behaviour of the MNOS structures simultaneously. Memory window width of above 6 V and retention time of 272 years was achieved for charging pulses of 15 V, 10 ms. |
| Databáze: | Directory of Open Access Journals |
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