| Autor: |
C. Perez, D. Talreja, J. Kirch, S. Zhang, V. Gopalan, D. Botez, B. M. Foley, B. Ramos-Alvarado, L. J. Mawst |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
APL Materials, Vol 11, Iss 4, Pp 041107-041107-6 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2166-532X |
| DOI: |
10.1063/5.0141252 |
| Popis: |
The thermal conductivity of Si-doped thin films of indium phosphide grown via metalorganic vapour-phase epitaxy at different carrier concentrations and thicknesses was measured from 80 to 450 K using time domain thermoreflectance. Additionally, phonon gas modeling was conducted to characterize the various scattering mechanisms that contribute to the thermal transport in these materials. A sensitivity analysis based on the phonon gas model showed that while thickness has a greater influence on the thermal conductivity than carrier concentration at the micron-scale for all samples, point defects due to Si-dopant atoms at carrier concentrations of ∼1019 cm−3, as well as the presence of extended defects that are most likely present due to dopant saturation, have a significant impact on thermal transport as a result of increased phonon scattering, decreasing the thermal conductivity by 40% or more. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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