High Selectivity Hydrogen Gas Sensor Based on WO3/Pd-AlGaN/GaN HEMTs

Autor:	Van Cuong Nguyen, Ho-Young Cha, Hyungtak Kim
Jazyk:	angličtina
Rok vydání:	2023
Předmět:	hydrogen sensor gallium nitride selectivity palladium catalyst tungsten trioxide high electron mobility transistor Chemical technology TP1-1185
Zdroj:	Sensors, Vol 23, Iss 7, p 3465 (2023)
Druh dokumentu:	article
ISSN:	1424-8220
DOI:	10.3390/s23073465
Popis:	We investigated the hydrogen gas sensors based on AlGaN/GaN high electron mobility transistors (HEMTs) for high temperature sensing operation. The gate area of the sensor was functionalized using a 10 nm Pd catalyst layer for hydrogen gas sensing. A thin WO3 layer was deposited on top of the Pd layer to enhance the sensor selectivity toward hydrogen gas. At 200 °C, the sensor exhibited high sensitivity of 658% toward 4%-H2, while exhibiting only a little interaction with NO2, CH4, CO2, NH3, and H2S. From 150 °C to 250 °C, the 10 ppm hydrogen response of the sensor was at least eight times larger than other target gases. These results showed that this sensor is suitable for H2 detection in a complex gas environment at a high temperature.
Databáze:	Directory of Open Access Journals
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