All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

Autor: Maheswari Sivan, Yida Li, Hasita Veluri, Yunshan Zhao, Baoshan Tang, Xinghua Wang, Evgeny Zamburg, Jin Feng Leong, Jessie Xuhua Niu, Umesh Chand, Aaron Voon-Yew Thean
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Zdroj: Nature Communications, Vol 10, Iss 1, Pp 1-12 (2019)
Druh dokumentu: article
ISSN: 2041-1723
DOI: 10.1038/s41467-019-13176-4
Popis: Designing efficient, scalable and low-thermal-budget 2D Materials for 3D integration remains a challenge. Here, the authors report the development of a hybrid-(solution-processed-exfoliated) integration of 2D Material based 1T1R which uses a multilayer WSe2 p-FET and a multilayer printed WSe2 RRAM.
Databáze: Directory of Open Access Journals