| Autor: |
Vala Fathipour, Iman Hassani Nia, Alireza Bonakdar, Hooman Mohseni |
| Jazyk: |
angličtina |
| Rok vydání: |
2016 |
| Předmět: |
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| Zdroj: |
IEEE Photonics Journal, Vol 8, Iss 3, Pp 1-7 (2016) |
| Druh dokumentu: |
article |
| ISSN: |
1943-0655 |
| DOI: |
10.1109/JPHOT.2016.2558508 |
| Popis: |
We present the signal-to-noise performance of a short-wave infrared detector, which offers an internal avalanche-free gain. The detector is based on a similar mechanism as the heterojunction phototransistor and takes advantage of a type-II band alignment. Current devices demonstrate a noise-equivalent sensitivity of ~670 photons at 260 K and over a linear dynamic range of 20 dB. While this level of sensitivity is about an order of magnitude better than an ideal p-i-n detector attached to the same low-noise amplifier, it was still limited by the amplifier noise (~2600 electrons root mean square) due to the insufficient device gain. Performance comparison with other SWIR detector technologies demonstrates that the so-called electron-injection detectors offer more than three orders of magnitude better noise-equivalent sensitivity compared with state-of-the-art phototransistors operating at similar temperature. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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