X-Ray Structural Investigations Of n-Si Irradiated with Protons

Autor: Sharifa B. Utamuradova, Aliona V. Stanchik, Dilmurod Rakhmanov
Jazyk: English<br />Russian<br />Ukrainian
Rok vydání: 2023
Předmět:
Zdroj: East European Journal of Physics, Iss 2 (2023)
Druh dokumentu: article
ISSN: 2312-4334
2312-4539
DOI: 10.26565/2312-4334-2023-2-21
Popis: In this work, the effect of proton irradiation on the change in the structure of silicon samples doped with platinum was studied. The samples were irradiated with protons at a dose of 9×1014 cm-2 with an energy of 600 keV and a current of 1÷1.5 μA. To determine the change in the structure after irradiation, the methods of X-ray diffraction and atomic force microscopy were used. The obtained results indicate that doping with platinum does not lead to a modification of the cubic crystal structure of silicon, but only to minor changes in the structural characteristics and surface morphology. In this case, proton irradiation of a silicon single crystal with a dose of 9.0×1014 cm–2 with an energy of 600 keV leads to the formation of defects without the formation of an amorphous near-surface layer.
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