Atomic-scale 3D imaging of individual dopant atoms in an oxide semiconductor

Autor: K. A. Hunnestad, C. Hatzoglou, Z. M. Khalid, P. E. Vullum, Z. Yan, E. Bourret, A. T. J. van Helvoort, S. M. Selbach, D. Meier
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Nature Communications, Vol 13, Iss 1, Pp 1-7 (2022)
Druh dokumentu: article
ISSN: 2041-1723
DOI: 10.1038/s41467-022-32189-0
Popis: Small variations in the density of dopants change the physical properties of complex oxides. Here, the authors resolve doping levels in three dimension, imaging the atomic sites that donors occupy in the small band gap semiconductor Er(Mn,Ti)O3.
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