| Autor: |
Jun-Gyu Kim, Hyeon-Bhin Jo, In-Geun Lee, Tae-Woo Kim, Dae-Hyun Kim |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 9, Pp 209-214 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2021.3056689 |
| Popis: |
We investigated the impact of a sulfur passivation (S-passivation) process step on carrier transport properties of surface-channel In0.7Ga0.3As quantum-well (QW) Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) with source/drain (S/D) regrowth contacts. To do so, we fabricated long-channel In0.7Ga0.3As QW MOSFETs with and without (NH4)2S treatment prior to a deposition of Al2O3/HfO2 = 1-nm/3-nm by atomic-layer-deposition (ALD). The devices with S-passivation exhibited a lower value of subthreshold-swing (S) = 74 mV/decade and more positive shift in the threshold voltage ( $\text{V}_{\mathrm{ T}}$ ) than those without S-passivation. From the perspective of carrier transport, S-passivated devices displayed excellent effective mobility ( $\mu _{eff}$ ) in excess of 6,300 cm2/ $\text{V}\cdot \text{s}$ at 300 K. It turned out that the improvement of $\mu _{eff}$ was attributed to reduced Coulombic and surface-roughness scatterings. Using a conductance method, a fairly small value of interface trap density $({\mathrm{ D}}_{\mathrm{ it}}) = 1.56 \times 10^{12}$ cm $^{-2}$ eV $^{-1}$ was obtained for the devices with S-passivation, which was effective in mitigating the Coulombic scattering at the interface between the high-k dielectric layer and the In0.7Ga0.3As surface-channel layer. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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