| Autor: |
Tregulov Vadim |
| Jazyk: |
English<br />Russian |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
St. Petersburg Polytechnical University Journal: Physics and Mathematics, Vol 13, Iss 2 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2405-7223 |
| DOI: |
10.18721/JPM.13202 |
| Popis: |
In this paper we study the effect of the distribution profile of the doping acceptor impurities concentration in the base region of the CdS/por-Si/Si-p heterostructure on the efficiency of solar energy conversion parameters. It has been established that the solar energy conversion efficiency depends on the degree of a doping acceptor impurity depletion of the near-surface Si-p layer in the por-Si/Si-p heterojunction. The distribution profile of the impurity concentration in this region is formed during the growth of a layer of porous silicon. The distribution profile is controlled by changing the technological parameters of the growth porous film process: current density and duration time of the electrochemical etching. The increase in the conversion efficiency of solar energy is explained by an increase in the penetration depth of the electric field into the base region due to the formation of a certain type of the impurity concentration distribution profile. In the final result this contributes to the rapid removal of charge carriers generated by the light from the base region before they have a time to recombine with the participation of traps. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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