| Autor: |
Longfei Xiao, Xiaobo Hu, Xiufang Chen, Yan Peng, Xianglong Yang, Xiangang Xu |
| Jazyk: |
angličtina |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 7, Iss 6, Pp 065119-065119-6 (2017) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.4991408 |
| Popis: |
GaAs-based 5-mm-gap photoconductive semiconductor switches (PCSSs), with a thickness of 1 mm, are fabricated. A 60° beveling angle is used to make a periodic array of grooves on the surface of GaAs by mechanical processing. The laser beam should be reflected back when a vertical laser is illuminated on these grooves according to total internal reflection (TIR), which leads to an improvement of the light use efficiency (LUE) for the PCSS. The on-state resistance, ranging from 5.17 Ω to 2.14 Ω for the PCSSs, decreases in proportion with an increase of the duty cycle from 0% to 87.8%, where the pulse laser energy is 6.1 mJ at 1064 nm. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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