| Autor: |
Nagaoka Akira, Shigeeda Yusuke, Nishioka Kensuke, Masuda Taizo, Yoshino Kenji |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
High Temperature Materials and Processes, Vol 40, Iss 1, Pp 439-445 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2191-0324 |
| DOI: |
10.1515/htmp-2021-0047 |
| Popis: |
I–III–VI2 Chalcopyrite Cu(In1−x Gax)Se2 (CIGS) has attracted attention as absorbing layer in photovoltaic (PV) device. In this study, we investigated the fundamental properties of CIGS single crystals, and fabricated single crystal-based PV device. CIGS single crystals without secondary phase were successfully grown by In-solvent traveling heater method (THM). The conversion of conduction type from n- to p-type can be observed above 0.3 of Ga ratio x because of high acceptor defect concentration. PV device based on high-quality CIGS bulk single crystal demonstrates high open-circuit voltage of 0.765 V with the efficiency of 12.6%. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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