Theoretical Analysis and Characterization of Multi-Islands Single-Electron Devices with Applications

Autor: Amine Touati, Samir Chatbouri, Nabil Sghaier, Adel Kalboussi
Jazyk: angličtina
Rok vydání: 2014
Předmět:
Zdroj: The Scientific World Journal, Vol 2014 (2014)
Druh dokumentu: article
ISSN: 2356-6140
1537-744X
DOI: 10.1155/2014/241214
Popis: A two- (2D) and three-dimensional (3D) multiple-tunnel junctions array is investigated. Device structure and electrical characteristics are described. We present a comparison of carriers transport through devices based on polymetallic grains based on master equation and the orthodox theory. The Coulomb blockade effect of 2D and 3D arrays is observed at low and high temperatures. The conduction mechanism is handled by the tunnel effect, and we adopt in addition the thermionic and Fowler-Nordheim emissions. Numerical simulation results focused on flash-memory and photodetector applications. Memory characteristics such as program/erase select gate operation are demonstrated in 2D devices. Also 3D array scheme is discussed for the high-density NCs scalable for photodetector application.
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