Epitaxial hexagonal boron nitride with high quantum efficiency

Autor: David Arto Laleyan, Woncheol Lee, Ying Zhao, Yuanpeng Wu, Ping Wang, Jun Song, Emmanouil Kioupakis, Zetian Mi
Jazyk: angličtina
Rok vydání: 2023
Předmět:
Zdroj: APL Materials, Vol 11, Iss 5, Pp 051103-051103-8 (2023)
Druh dokumentu: article
ISSN: 2166-532X
DOI: 10.1063/5.0142242
Popis: Two-dimensional (2D) hexagonal boron nitride (h-BN) is one of the few materials showing great promise for light emission in the far ultraviolet (UV)-C wavelength, which is more effective and safer in containing the transmission of microbial diseases than traditional UV light. In this report, we observed that h-BN, despite having an indirect energy bandgap, exhibits a remarkably high room-temperature quantum efficiency (∼60%), which is orders of magnitude higher than that of other indirect bandgap material, and is enabled by strong excitonic effects and efficient exciton-phonon interactions. This study offers a new approach for the design and development of far UV-C optoelectronic devices as well as quantum photonic devices employing 2D semiconductor active regions.
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