Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband Photodetection
| Autor: | Dung-Sheng Tsai, Ping-Yu Chiang, Meng-Lin Tsai, Wei-Chen Tu, Chi Chen, Shih-Lun Chen, Ching-Hsueh Chiu, Chen-Yu Li, Wu-Yih Uen |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | Micromachines, Vol 11, Iss 9, p 812 (2020) |
| Druh dokumentu: | article |
| ISSN: | 11090812 2072-666X |
| DOI: | 10.3390/mi11090812 |
| Popis: | This work demonstrates a self-powered and broadband photodetector using a heterojunction formed by camphor-based chemical vaper deposition (CVD) bilayer graphene on p-Si substrates. Here, graphene/p-Si heterostructures and graphene layers serve as ultra-shallow junctions for UV absorption and zero bandgap junction materials (2) Raman mapping, a low-defect, >95% coverage bilayer and high-uniformity graphene were successfully obtained by camphor-based CVD processes. Furthermore, the carrier mobility of the camphor-based CVD bilayer graphene at room temperature is 1.8 × 103 cm2/V·s. Due to the incorporation of camphor-based CVD graphene, the graphene/p-Si Schottky junctions show a good rectification property (rectification ratio of ~110 at ± 2 V) and good performance as a self-powered (under zero bias) photodetector from UV to LWNIR. The photocurrent to dark current ratio (PDCR) value is up to 230 at 0 V under white light illumination, and the detectivity (D*) is 8 × 1012 cmHz1/2/W at 560 nm. Furthermore, the photodetector (PD) response/decay time (i.e., rise/fall time) is ~118/120 μs. These results support the camphor-based CVD bilayer graphene/Si Schottky PDs for use in self-powered and ultra-broadband light detection in the future. |
| Databáze: | Directory of Open Access Journals |
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