| Autor: |
K. Michalczewski, T.Y. Tsai, P. Martyniuk, C.H. Wu |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
Bulletin of the Polish Academy of Sciences: Technical Sciences, Vol 67, Iss No. 1, Pp 141-145 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2300-1917 |
| DOI: |
10.24425/bpas.2019.127343 |
| Popis: |
We report on the photoresponse of mid-wavelength infrared radiation (MWIR) type-II superlattices (T2SLs) InAs/InAsSb high operating temperature (HOT) photoresistor grown on GaAs substrate. The device consists of a 200 periods of active layer grown on GaSb buffer layer. The photoresistor reached a 50% cut-off wavelength of 5 µm and 6 µm at 200 K and 300 K respectively. The time constant of 30 ns is observed at 200 K under 1 V bias. This is the first observation of the photoresponse in MWIR T2SLs InAs/InAsSb above 200 K. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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