Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE

Autor: Huang Teng-Hsing, Chang Liuwen, Chou Mitch, Schuber Ralf, Schaadt Daniel, Shih Cheng-Hung, Chen Yen-Liang, Lo Ikai
Jazyk: angličtina
Rok vydání: 2011
Předmět:
Zdroj: Nanoscale Research Letters, Vol 6, Iss 1, p 425 (2011)
Druh dokumentu: article
ISSN: 1931-7573
1556-276X
Popis: Abstract We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship and for M -plane GaN is confirmed. The main defects are threading dislocations and stacking faults in both samples. For the M -plane sample, the density of threading dislocations is around 1 × 1011 cm-2 and the stacking fault density amounts to approximately 2 × 105 cm-1. In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample.
Databáze: Directory of Open Access Journals
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