| Autor: |
Hayeon Shim, Yongwoo Kwon |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
AIP Advances, Vol 9, Iss 12, Pp 125203-125203-5 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.5127959 |
| Popis: |
We estimated the interface trap density by examining methylamine-lead-iodide (MALI, CH3NH3PbI3) and metal contacts. We analyzed experimental current-voltage curves from two MALI-based resistive memory devices, which are Au/MALI/indium-tin-oxide and Ag/MALI/Pt, using a device simulator. We obtained effective work functions (EWFs) for MALI/metal contacts by considering Fermi level pinning attributed to the interface states comprising metal-induced gap states (MIGSs) and interface traps. Through our theoretical consideration, we concluded that the interface trap density is about 1015 eV−1 cm−2 at MALI/metal contacts because the low MIGS density of about 1013 eV−1 cm−2 obtained from a theoretical equation makes little contribution to the interface state density of 1015 eV−1 cm−2 obtained from the linear fitting between the metal work functions and the EWFs. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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