Deposition Mechanism and Characterization of Plasma-Enhanced Atomic Layer-Deposited SnOx Films at Different Substrate Temperatures

Autor: Pao-Hsun Huang, Zhi-Xuan Zhang, Chia-Hsun Hsu, Wan-Yu Wu, Sin-Liang Ou, Chien-Jung Huang, Dong-Sing Wuu, Shui-Yang Lien, Wen-Zhang Zhu
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Nanomaterials, Vol 12, Iss 16, p 2859 (2022)
Druh dokumentu: article
ISSN: 2079-4991
DOI: 10.3390/nano12162859
Popis: The promising functional tin oxide (SnOx) has attracted tremendous attention due to its transparent and conductive properties. The stoichiometric composition of SnOx can be described as common n-type SnO2 and p-type Sn3O4. In this study, the functional SnOx films were prepared successfully by plasma-enhanced atomic layer deposition (PEALD) at different substrate temperatures from 100 to 400 °C. The experimental results involving optical, structural, chemical, and electrical properties and morphologies are discussed. The SnO2 and oxygen-deficient Sn3O4 phases coexisting in PEALD SnOx films were found. The PEALD SnOx films are composed of intrinsic oxygen vacancies with O-Sn4+ bonds and then transformed into a crystalline SnO2 phase with increased substrate temperature, revealing a direct 3.5–4.0 eV band gap and 1.9–2.1 refractive index. Lower (300 °C) substrate temperatures can cause precursor condensation and desorption, respectively, resulting in reduced film qualities. The proper composition ratio of O to Sn in PEALD SnOx films near an estimated 1.74 suggests the highest mobility of 12.89 cm2 V−1 s−1 at 300 °C.
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