| Autor: |
Nicholas C. Miller, Michael Elliott, Eythan Lam, Ryan Gilbert, Jansen Uyeda, Robert L. Coffie |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of Microwaves, Vol 3, Iss 3, Pp 1005-1013 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2692-8388 |
| DOI: |
10.1109/JMW.2023.3279014 |
| Popis: |
This article presents an empirical investigation of calibration effects on load-pull measurements collected on wafer and at W-band frequencies. An analysis of scattering parameter (S-parameter) measurements provides insight into how small-signal metrics germane to load pull are affected by choice of the calibration technique. It is found that off-wafer line-reflect-reflect-match (LRRM) calibrated measurements of the same transistor with different probes exhibit drastically different maximum small-signal gains compared to equivalent on-wafer multiline thru-reflect-line (mTRL) calibrated measurements. Load-pull measurements are heavily influenced by choice of calibration algorithm, and LRRM calibrated large-signal measurements collected with different waveguide probes yield variations in large-signal gain of over 2 dB and variations in peak PAE of over 24 percentage points. The equivalent on-wafer mTRL calibrated load-pull measurements collected with different waveguide probes are consistent to within 0.1 dB for large-signal gain and 1 percentage point for peak PAE. This work provides quantitative evidence that on-wafer mTRL calibration with well-designed calibration structures is preferred for large-signal measurements collected at millimeter-wave frequencies. If utilization of on-wafer mTRL calibration is not possible, this work suggests using similar measurement setups, i.e., waveguide probes, calibration standards, etc., for evaluating on-wafer unmatched transistors in a consistent manner. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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